CSD19503KCS دیتاشیت

CSD19503KCS

مشخصات دیتاشیت

نام دیتاشیت CSD19503KCS
حجم فایل 79.003 کیلوبایت
نوع فایل pdf
تعداد صفحات 13

مشاهده دیتاشیت CSD19503KCS

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سایر مستندات

CSD19503KCS 10 pages

مشخصات فنی

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Texas Instruments CSD19503KCS
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 188W
  • Total Gate Charge (Qg@Vgs): 36nC@10V
  • Drain Source Voltage (Vdss): 80V
  • Input Capacitance (Ciss@Vds): 2730pF@40V
  • Continuous Drain Current (Id): 100A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.4V@250uA
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 9.2mΩ@60A,10V
  • Package: TO-220
  • Manufacturer: Texas Instruments
  • Power Dissipation (Max): 188W (Tc)
  • Drain to Source Voltage (Vdss): 80V
  • Rds On (Max) @ Id, Vgs: 9.2mOhm @ 60A, 10V
  • Vgs (Max): ±20V
  • FET Type: N-Channel
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Technology: MOSFET (Metal Oxide)
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • FET Feature: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2730pF @ 40V
  • Packaging: Tube
  • Package / Case: TO-220-3
  • Part Status: Active
  • Series: NexFET™
  • Vgs(th) (Max) @ Id: 3.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Supplier Device Package: TO-220-3
  • Mounting Type: Through Hole
  • Base Part Number: CSD1950
  • detail: N-Channel 80V 100A (Ta) 188W (Tc) Through Hole TO-220-3

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